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| Data Sheet No. 2N3501L Type 2N3501L Geometry 5620 Polarity NPN Qual Level: JAN - JANS Features: * General-purpose silicon transistor for switching and amplifier applications. Housed in TO-5 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases. Generic Part Number: 2N3500L REF: MIL-PRF-19500/366 * * * TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25oC Derate above 25oC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Rating 150 150 6.0 300 5.0 28.8 Unit V V V mA mW mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3501L Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 A Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 A Collector-Base Cutoff Current VCB = 75 V Emitter-Base Cutoff Current VEB = 4 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 150 150 6.0 ----- Max ------50 25 Unit V V V nA nA ON Characteristics Forward Current Transfer Ratio IC = 100 A, VCE = 10 V (pulsed) IC = 1.0 mA, VCE = 10 V (pulsed) IC = 10 mA, VCE = 10 V (pulsed) IC = 150 mA, VCE = 10 V (pulsed) IC = 300 mA, VCE = 10 V (pulsed) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBE(sat)1 VBE(sat)2 VCE(sat)1 VCE(sat)2 Min 35 50 75 100 20 --------- Max ------300 --0.8 1.2 0.2 0.4 Unit ----------V dc V dc V dc V dc Small Signal Characteristics Short Circuit Forward Current Transfer Ratio IC = 10 mA, VCE = 10 V, f = 1 kHz Magnitude of Common Emitter, Small Signal, Short Circuit Symbol AC hFE |hFE| COBO CIBO NF NF Min 75 1.5 --------- Max 375 8.0 8.0 80 16 6.0 Unit ----pF pF dB dB Forward Current Transfer Ratio VCE = 20 V, IC = 20 mA, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Noise Figure VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz Noise Figure VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz Switching Characteristics Saturated Turn On Switching time to 90% IC = 150 mA, IB1 = 15 mA, VEB = 2 V Saturated Turn Off Switching time to 10% IC = 150 mA, IB2 = -IB1 = 15 mA Symbol tON tOFF Min ----- Max 115 1150 Unit ns ns |
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